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| DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and ouput prematch for broadband capabilit. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AY, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 290 Watts 55 Volts 4.0 Volts 15 Amps - 65 to + 150oC + 150oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg c VSWR BVebo BVces hFE 2 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1025-1150 MHz Vcc = 50 Volts PW = 10 sec DF = 1% F = 1025 MHz MIN 150 TYP MAX 25 UNITS Watts Watts dB % 7.8 8.3 40 20:1 jc Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 15 mA Ic = 25 mA Ic = 250 mA, Vce = 5 V 4.0 55 20 Volts Volts 100 0.6 o C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Rev A January 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. DME150 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. |
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